Since silicon is a relatively light for hard X-rays the only limitation at high energies is the acceptable absorption efficiency that can be achieved in the sensors thickness.
Figure 2.1 shows the absorption efficiency as a function of the X-ray energy and detector thickness. Normally it is possible to use sensors up to 1 mm thick, while to achieve larger absorption thicknesses it is necessary tu assemble and control telescopic systems (possible up to a few mms).
To achieve larger absorption thicknesses, the sensors can be oriented in edge-on configuration (in particular strip sensors). However in this case one should take into consideration the dead entrance window due to the cutting distance from the strips, which is normally several hundreds micron, or even up to mms and reduces the absorption efficiency at lower energies.
In standard face-on orientation, the backplane of the sensor acts as the entrance window. It presents a think n+ doped layer, which is unsensitive to radiation and causes a loss of efficiency at low energies.
Figure 2.2 shows the absorption efficiency of the sensors for different backplane thicknesses at low energies.
The exact thickness of the backplane for standard SLS sensors is not exactly known but should be about 1-2
m.
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However for lower energies, the main limitation is normally given by the noise of the frontend electronics (if single photon resolution is required).
For higher energies it is also possible to use different sesnor materials as CdTe or Ge, although up to now they cannot provide the same signal quality as silicon.
The limitations on the energy range arising from the readout electronics come from the noise and from saturation. The electronic noise limits the minimum detectable energy for single photons, while saturation limits the maximum detectable signal either for single photons or in total.
Concerning saturation, this imposes a maximum value for the comparator threshold. Normally photons of higher energies can still be detected, but without resolution concerning the threshold energy and eventually losing spatial resolution. By changing the settings it is possible to increase the maximum threshold value (normally also noise increases in this case).
Concerning saturation, this sets a limit on the total number of photons acquired during the acquistion slot and is normally much larger than the energy released by single X-rays. Dynamic gain switching can strongly increase the dynamic range of the detector up to 10E+4 12 keV photons.
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